| Autor: |
M. Tong, L. Aina, K. Nummila, A.A. Ketterson, M. Mattingly, Ilesanmi Adesida |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. |
| DOI: |
10.1109/iciprm.1992.235678 |
| Popis: |
The authors have fabricated and characterized MODFETs on OMVPE (organometallic vapor-phase epitaxy)-grown InAlAs/InGaAs/InP heterostructures. Excellent DC and RF characteristics were obtained. Extrinsic DC transconductance as high as 1020 mS/mm and a unity current gain cut-off frequency, f/sub T/, of 114 GHz were obtained for devices with 0.27- mu m gate-length. An effective saturation velocity of 2.0*10/sup 7/ cm/s was obtained for these devices. These results are shown to be comparable to the best results reported in the literature for MODFETs fabricated in MBE (molecular-beam epitaxy)-grown heterostructures. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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