Vertical InGaN light-emitting diodes with Ag paste as bonding layer
| Autor: | Jinn-Kong Sheu, Shang Ju Tu, Feng Wen Huang, Y. C. Yang, Chih-Chiang Yang, Shu Yen Liu, Ming-Lun Lee, Che Kang Hsu |
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| Rok vydání: | 2012 |
| Předmět: |
Engineering drawing
Materials science Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Anodic bonding Soldering Eutectic bonding Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality Layer (electronics) Light-emitting diode Diode Metallic bonding Eutectic system |
| Zdroj: | Microelectronics Reliability. 52:949-951 |
| ISSN: | 0026-2714 |
| Popis: | Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 °C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au–Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au–Sn eutectic bonding layer. |
| Databáze: | OpenAIRE |
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