Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
| Autor: | Niladri Narayan Mojumder, Kaushik Roy, Charles Augustine, Xuanyao Fong, Sang Phill Park, Sri Harsha Choday |
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| Rok vydání: | 2012 |
| Předmět: |
Engineering
Hardware_MEMORYSTRUCTURES business.industry Spin-transfer torque Electrical engineering Circuit reliability Computer Science::Hardware Architecture Parametric process Robustness (computer science) Low-power electronics Computer data storage Electronic engineering Electrical and Electronic Engineering Design methods business Instrumentation Random access |
| Zdroj: | IEEE Sensors Journal. 12:756-766 |
| ISSN: | 2379-9153 1530-437X |
| DOI: | 10.1109/jsen.2011.2124453 |
| Popis: | Electron-spin based data storage for on-chip memories has the potential for ultrahigh density, low power consumption, very high endurance, and reasonably low read/write latency. In this article, we analyze the energy-performance characteristics of a state-of-the-art spin-transfer-torque based magnetic random access memories (STT-MRAM) bit-cell in the presence of parametric process variations. In order to realize ultra low power under process variations, we propose device, bit-cell and architecture level design techniques. Such design methods at various levels of design abstraction has been found to achieve substantially enhanced robustness, density, reliability and low power as compared to their charge-based counterparts for future embedded applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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