| Autor: |
Mark Gardner, Howard R. Huff, H.-J. Li, Chadwin D. Young, Alain C. Diebold, J. Saulters, J. Price, Jeffrey J. Peterson, T. Rhoad, Peter Zeitzoff, P. Y. Hung, Gennadi Bersuker, T. Pompl, George A. Brown |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC.. |
| Popis: |
A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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