Optical and electrical properties of Nd‐doped BiFeO 3 thin films and heterostructures

Autor: Jelena Devenson, F. Anisimovas, Bonifacas Vengalis, A.K. Oginskis, Renata Butkute, Leonas Dapkus, V. Lisauskas
Rok vydání: 2009
Předmět:
Zdroj: physica status solidi c. 6:2746-2749
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200982540
Popis: High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150-350 nm) were grown at 650-750°C by RF sputtering on dielectric (SrTiO3; ZrO2 ) and conducting (Nb-doped SrTiO3(100); n-type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T =300 K although complicated shape of I-U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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