Etching Silicon with Aqueous Acidic Ozone Solutions: Reactivity Studies and Surface Investigations
| Autor: | Edwin Kroke, Christoph Gondek, Florian Honeit, Ronny Hanich, André Stapf, Andreas Lißner |
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| Rok vydání: | 2016 |
| Předmět: |
Aqueous solution
Silicon Chemistry Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound symbols.namesake General Energy Hydrofluoric acid Etching (microfabrication) Oxidizing agent symbols Diffuse reflection Physical and Theoretical Chemistry 0210 nano-technology Raman spectroscopy Spectroscopy |
| Zdroj: | The Journal of Physical Chemistry C. 120:22349-22357 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | Aqueous acidic ozone (O3)-containing solutions are increasingly used for silicon treatment in photovoltaic and semiconductor industries. We studied the behavior of aqueous hydrofluoric acid (HF)-containing solutions (i.e., HF–O3, HF–H2SO4–O3, and HF–HCl–O3 mixtures) toward boron-doped solar-grade (100) silicon wafers. The solubility of O3 and etching rates at 20 °C were investigated. The mixtures were analyzed for the potential oxidizing species by UV–vis and Raman spectroscopy. Concentrations of O3 (aq), O3 (g), and Cl2 (aq) were determined by titrimetric volumetric analysis. F–, Cl–, and SO42– ion contents were determined by ion chromatography. Model experiments were performed to investigate the oxidation of H-terminated silicon surfaces by H2O–O2, H2O–O3, H2O–H2SO4–O3, and H2O–HCl–O3 mixtures. The oxidation was monitored by diffuse reflection infrared Fourier transformation (DRIFT) spectroscopy. The resulting surfaces were examined by scanning electron microscopy (SEM) and X-ray photoelectron spectrosc... |
| Databáze: | OpenAIRE |
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