GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon
| Autor: | E.A. Chusovitin, N. G. Galkin, S.A. Dotsenko, Alexander V. Shevlyagin, Anton K. Gutakovskii, D. L. Goroshko, S. V. Chusovitina |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) 02 engineering and technology Crystal structure Epitaxy 01 natural sciences Monocrystalline silicon chemistry.chemical_compound 0103 physical sciences General Materials Science 010302 applied physics business.industry Mechanical Engineering Metals and Alloys Heterojunction Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallography Gallium antimonide Nanocrystal chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business |
| Zdroj: | Scripta Materialia. 136:83-86 |
| ISSN: | 1359-6462 |
| DOI: | 10.1016/j.scriptamat.2017.04.004 |
| Popis: | A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb 1 1 − 0 ||Si 1 1 − 0 . |
| Databáze: | OpenAIRE |
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