High performance foreign-dopant-free ZnO/Al Ga N ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer

Autor:	Quan Wen, Zesheng Lv, Shiquan Lai, Leyi Li, Hao Jiang
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering Materials Chemistry Metals and Alloys
Zdroj:	Journal of Alloys and Compounds. 937:168433
ISSN:	0925-8388
DOI:	10.1016/j.jallcom.2022.168433
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::414dd4d81e87a77564a32ea9453fce55 https://doi.org/10.1016/j.jallcom.2022.168433 Zobrazit plný text záznamu Full Text from ScienceDirect