Impact of geometry aspect ratio on 10-nm gate-all-around silicon-germanium nanowire field effect transistors

Autor:	Yiming Li, Pei Jung Chao
Rok vydání:	2014
Předmět:	chemistry.chemical_compound Materials science chemistry Aspect ratio business.industry Nanowire Optoelectronics Field-effect transistor Nanotechnology business Silicon-germanium
Zdroj:	14th IEEE International Conference on Nanotechnology.
DOI:	10.1109/nano.2014.6968188
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::414d255e5d83aef85e68a93a52a84b9f https://doi.org/10.1109/nano.2014.6968188 Zobrazit plný text záznamu