A complementary high current gain transistor for use in a CMOS compatible technology

Autor:	S. Verdonckt-Vandebroek, S. Simon Wong, J.C.S. Woo
Rok vydání:	2002
Předmět:	Materials science High current gain business.industry Bipolar junction transistor Transistor Electrical engineering Cutoff frequency law.invention CMOS law MOSFET Optoelectronics business Ohmic contact Cmos compatible
Zdroj:	Proceedings on Bipolar Circuits and Technology Meeting.
DOI:	10.1109/bipol.1990.171132
Popis:	The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000 are presented. Because of the moderate cutoff frequency (i.e., f/sub T/ >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4145da2ac0da9bcd13d2867d8235f746 https://doi.org/10.1109/bipol.1990.171132 Zobrazit plný text záznamu