Pseudogap state density in sputtereda‐Si:H from field effect and capacitance measurements

Autor:	Pierre Viktorovitch, Richard Weisfield, David A. Anderson, William Paul
Rok vydání:	1981
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Silicon Band gap Fermi level Field effect chemistry.chemical_element Capacitance Semimetal symbols.namesake chemistry Electric field symbols Pseudogap
Zdroj:	Applied Physics Letters. 39:263-265
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.92666
Popis:	Changes in film deposition procedure have permitted us to measure, for the first time, field‐effect‐induced current multiplication up to 104 in sputtered a‐Si:H. The deduced Fermi‐level state density of the order of 1×1017 eV−1 cm−3 agrees within small errors with analysis of capacitance measurements on codeposited samples.
Databáze:	OpenAIRE
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