Photoluminescence studies of GaAs quantum dots and quantum rings
| Autor: | Á. Nemcsics, Andrea Stemmann, Janos Balazs, János Makai, Bálint Pődör |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Nanostructure Photoluminescence Condensed matter physics Condensed Matter::Other Quantum point contact Physics::Optics Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Condensed Matter::Materials Science Quantum dot Nitrogen-vacancy center Quantum |
| Zdroj: | physica status solidi c. 8:2826-2829 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.201084134 |
| Popis: | Recently, the growth of self-assembled quantum structures has been intensively investigated for basics physics and device application. In our work, self-assembled strain-free GaAs quantum dots and quantum rings were investigated by the photoluminescence technique. The GaAs nanostructures are fabricated on AlGaAs (001) surface by droplet epitaxy method. Temperature dependent photoluminescence spectra were measured in the range of room temperature and 4 K. We give an explanation on the broadening of the photoluminescence peaks for different quantum structures. The calculated electronic structure is compared with the photoluminescence data (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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