TRANSMISSION ELECTRON MICROSCOPY OF SURFACE AND INTERFACIAL STEPS
| Autor: | J. M. Gibson, Xi Chen, O. Pohland |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Surface (mathematics)
business.industry Chemistry Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films Stress (mechanics) Optics Electron tomography Transmission electron microscopy Position (vector) Free surface Materials Chemistry Energy filtered transmission electron microscopy High-resolution transmission electron microscopy business |
| Zdroj: | Surface Review and Letters. :559-566 |
| ISSN: | 1793-6667 0218-625X |
| DOI: | 10.1142/s0218625x97000547 |
| Popis: | Transmission electron microscopy is uniquely able to extend techniques for imaging free surface steps to the buried interface regime, without significant loss of detail. Two mechanisms for imaging surface and interfacial steps by transmission electron microscopy are described. They are thickness contrast and strain contrast. The former reveals the position and approximate height of steps, whereas the latter detects stress fields which are commonly associated with steps. The basis for each of these methods is elaborated, and preliminary results are shown for step images at Si/SiO2 interfaces, where measurable stress fields have been directly detected for the first time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|