Structural Analyses of Thin SiO2Films Formed by Thermal Oxidation of Atomically Flat Si Surface by Using Synchrotron Radiation X-Ray Characterization

Autor:	Tomoyuki Suwa, Kohki Nagata, Akinobu Teramoto, Tadahiro Ohmi, Atsushi Ogura, Takeo Hattori, Ichiro Hirosawa
Rok vydání:	2015
Předmět:	Thermal oxidation Diffraction Crystallography Lattice constant Materials science X-ray Analytical chemistry Synchrotron radiation Reflectometry Electronic Optical and Magnetic Materials Amorphous solid Characterization (materials science)
Zdroj:	ECS Journal of Solid State Science and Technology. 4:N96-N98
ISSN:	2162-8777 2162-8769
Popis:	Partially crystalline structures in thin SiO2 films formed by thermal oxidation of atomically flat Si surface were investigated by performing X-ray reflectometry and grazing incidence X-ray diffraction measurements. The densities of the SiO2 films were higher than those of amorphous SiO2 films, especially at the SiO2/Si interface. The structure of thermally grown SiO2 has been expected to be amorphous, but sharp diffraction peaks were observed in GIXRD measurements. The diffraction peaks tended to reflect a cristobalite-like structure with preferential orientations to the Si substrate. In addition, the lattice spacing of the cristobalite-like structure was estimated from the GIXRD measurement and found to be isotropically distorted. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any
Databáze:	OpenAIRE
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