Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique
| Autor: | Rabah Cherfi, A. Boukezzata, Noureddine Gabouze, Amer Brighet, A. Cheriet, Aissa Keffous, Y. Belkacem, Yacine Boukennous, Lakhdar Guerbous, Hamid Menari, Isa Menous, Mohamed Kechouane |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Photoluminescence Argon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound chemistry Sputtering Cavity magnetron Silicon carbide Fourier transform infrared spectroscopy |
| Zdroj: | Applied Surface Science. 256:4591-4595 |
| ISSN: | 0169-4332 |
| Popis: | Hydrogenated amorphous SiC films (a-Si1−xCx:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H–SiC). The deposited a-Si1−xCx:H film was realized under a mixture of argon and hydrogen gases. The a-Si1−xCx:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV–vis–IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si0.80C0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si1−xCx:H) has been investigated. |
| Databáze: | OpenAIRE |
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