Quantum size effects on photoluminescence from Si nanocrystals in PECVD silicon-rich-oxide
| Autor: | Ming-Chi Liaw, Chrong Jung Lin, Sheng-fu Horng, Charles Ching-Hsiang Hsu, Ping-Yu Kuei, Ching-Song Yang |
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| Rok vydání: | 1997 |
| Předmět: |
Photoluminescence
Materials science Silicon business.industry Annealing (metallurgy) Nanocrystalline silicon General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Nanocrystal chemistry Plasma-enhanced chemical vapor deposition Optoelectronics Thin film business Luminescence |
| Zdroj: | Applied Surface Science. :116-120 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(96)00895-1 |
| Popis: | Red-shift of photoluminescence (PL) spectra and increasing intensity after subsequent annealing have been observed in plasma-enhanced chemical-vapor-deposition (PECVD) silicon-rich-oxide (SRO). Based on FTIR results, however, PECVD SRO does experience chemical and structural changes during post-deposition annealing and becomes denser. Besides, the enhanced tunneling characteristics of MOS capacitor using SRO thin film as injector due to nanocrystalline silicon (nc-Si) in SRO thin film is also observed. These results strongly suggest the luminescence and the enhanced tunneling characteristics originate from the quantum size effect of nc-Si. In this paper, a Si-island model is proposed to delineate the gradual red-shift phenomenon of PL spectra. |
| Databáze: | OpenAIRE |
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