Suppression of molecular ions in SIMS spectra of metals and semiconductors
| Autor: | William J. Chauvin, D. Fichter, N. S. McIntyre, W. H. Robinson, James B. Metson |
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| Rok vydání: | 1985 |
| Předmět: |
Silicon
business.industry Polyatomic ion Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Ion Metal Secondary ion mass spectrometry Semiconductor chemistry Chemical physics Secondary emission visual_art Materials Chemistry visual_art.visual_art_medium Mass spectrum business |
| Zdroj: | Surface and Interface Analysis. 7:69-73 |
| ISSN: | 1096-9918 0142-2421 |
| DOI: | 10.1002/sia.740070203 |
| Popis: | Strong suppression of molecular ions in positive secondary ion mass spectra (SIMS) is achieved by electric isolation of a specimen (SI) with an electrically charged aperture situated immediately above its surface. This technique is also useful for controlling the surface charging on an insulator. The origin of this phenomenon has been explored using metals and semiconductors as models. The strong molecular suppression effect is found to result from the very high ion kinetic energies (>400 eV) emerging from the surface under SI conditions. The charged aperture is believed to stabilize surface charging by confining it within a small region. SI methods for reducing molecular ions in silicon and mild steel specimens reduce major molecular fragments by 3–4 orders of magnitude. |
| Databáze: | OpenAIRE |
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