Influence of phonon-associated tunneling rate on transport through a single-molecule transistor
Autor: | Der-San Chuu, Ying-Tsan Tang, Kao-Chin Lin |
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Rok vydání: | 2011 |
Předmět: |
Condensed matter physics
Phonon Band gap Chemistry Transistor Scanning tunneling spectroscopy Conductance Biasing General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Tunnel effect law Condensed Matter::Superconductivity Materials Chemistry Quantum tunnelling |
Zdroj: | Solid State Communications. 151:87-92 |
ISSN: | 0038-1098 |
DOI: | 10.1016/j.ssc.2010.10.007 |
Popis: | We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electron–phonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads ( n = 0 ) and the first phonon sideband ( n = 1 ). These anomalies are consistent with the experimental observations in transport experiments. |
Databáze: | OpenAIRE |
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