Experimental determination of time constants for ion-induced transients in static memories

Autor:	J.S. Browning, H.T. Weaver, J.S. Fu, B.D. Shafer
Rok vydání:	1988
Předmět:	High energy Chemistry business.industry Electrical engineering Time constant Upset Electronic Optical and Magnetic Materials Ion Transient response Transient (oscillation) Electrical and Electronic Engineering Atomic physics business Energy (signal processing) Voltage
Zdroj:	IEEE Transactions on Electron Devices. 35:1116-1119
ISSN:	1557-9646 0018-9383
DOI:	10.1109/16.3371
Popis:	Time constants for voltage transients following high energy ion strikes on static memories are determined from a series of experiments measuring cross sections for single-event upset. For a given strike location within the circuit, the transient time constant saturates with increasing deposited energy. These maximum transients, for strikes at the two known sensitive areas, 'off' p-channel drain and 'off' n-channel drain, were measured at 6 and 0.8 ns, respectively. >
Databáze:	OpenAIRE
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