Skew-reflection X-ray microscopy of the vapor-growth surface of an Al2O single crystal

Autor: E. N. Farabaugh, R. W. Armstrong, H. S. Parker
Rok vydání: 1973
Předmět:
Zdroj: Journal of Applied Crystallography. 6:482-486
ISSN: 0021-8898
Popis: The most commonly used geometry for the Berg–Barrett X-ray microscopy uses the zero-layer reflections as described by Newkirk. It can be shown that non-zero-layer reflections, skew-plane reflections, can be used equally well to obtain X-ray micrographs. The analysis of the stereographic representation of the skew-reflection geometry demonstrates the many usable reflections and gives the conditions for minimum image distortion. In these X-ray micrographs the contributions to diffraction contrast from shadowing and sub-boundaries can be identified. An estimate of the height of steps occurring on the crystal surface can also be made.
Databáze: OpenAIRE