Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 $^{\circ}\hbox{C}$
| Autor: | Sigurd Wagner, James C. Sturm, B. Hekmatshoar, Kunigunde H. Cherenack |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Materials science Silicon Passivation business.industry Transistor chemistry.chemical_element Flexible electronics Electronic Optical and Magnetic Materials law.invention Amorphous solid chemistry.chemical_compound chemistry Silicon nitride law Thin-film transistor Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 57:2381-2389 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2056132 |
| Popis: | We fabricated back-channel-cut and back-channel-passivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN∞) deposition temperature of 300°C. The TFTs were fabricated on CP and are as stable under high gate bias as TFTs made on glass substrates. A self-alignment technique was developed to align the channel passivation, the a-Si:H island, and the source/drain (S/D) terminals to the gate. Self-alignment allowed us to fabricate discrete TFTs across 7 7 × cm2 of a free-standing sheet of CP foil to reduce the TFT channel length L to 3 m and reduce the S/D overlap with the gate LSD to ~1. To test the self-alignment techniques, we fabricated ring oscillators on the CP substrates. These results show that it is possible to fabricate state-of-the-art self-aligned a-Si:H TFTs and TFT circuits on plastic substrates. |
| Databáze: | OpenAIRE |
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