Laser Ablated Penetrating V-Grooves for Black c-Si Solar Cells
| Autor: | Untila, G., Kost, T., Chebotareva, A., Poroykov, A., Stepanov, A., Zaks, M., Sitnikov, A., Solodukha, O., Saprykin, D., Grishaev, A. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| DOI: | 10.4229/26theupvsec2011-2bv.3.41 |
| Popis: | 26th European Photovoltaic Solar Energy Conference and Exhibition; 1715-1719 Different approaches are under elaboration aimed at the cost reduction of solar electricity. 3D penetrating emitter solar cells are expected to offer performance enhancement at lower costs, using smaller volumes of low carrier lifetime, cheaper silicon. Using laser ablation, we have prepared Indium-Fluorine-Oxide/(n+pp+)Cz-Si/Indium-Tin-Oxide bifacial silicon solar cells with deep (110-120 μm) penetrating V-shaped emitter with aspect ratio (height to width) of 1.5-2. As compared with the non-laser-processed reference cell textured with conventional random pyramids, which showed front/rear active area photocurrents of 41.1/33.3 mA/cm2, V-grooved solar cells showed only slightly less front photocurrent of 40.1-40.7 mA/cm2, but superior rear photocurrent of 34.2 mA/cm2. The latter indicates that deep penetrating emitter is especially useful in the case of bifacial solar cells. The best pseudo-efficiency for V-grooved cell of 19.5% with estimated bifaciality of ~80% was obtained for the cell, which suffered the lowest laser impact during Vgrooving. These results confirm that the design of crystalline silicon solar cell based on deep penetrating V-shaped emitter makes it possible to obtain high-efficiency solar cells even in the case of low-quality silicon wafers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|