Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices

Autor:	Peter G. Hofstra, Alex N. Krasnov
Rok vydání:	2001
Předmět:	Materials science business.industry General Physics and Astronomy Phosphor Trapping Electroluminescence Active layer law.invention law Vacancy defect Optoelectronics Thin film Alternating current business Voltage
Zdroj:	Journal of Applied Physics. 90:2243-2246
ISSN:	1089-7550 0021-8979
Popis:	In spite of a significant number of studies on memory effect in alternating-current thin-film electroluminescent devices, the phenomenon is still unclear. In the present work we investigate some peculiarities of memory behavior of the devices from the viewpoint of the nonequilibrium carrier trapping time. Applying a combination of unique voltage staircase waveforms, we demonstrate that the degree of memory of the device is determined by the trapping time of the carriers at the insulator–semiconductor interface and the sulfur vacancy (Vs) concentration in the bulk of the active layer. We also show that separating electrons and holes before the pulse arrival can increase the effective field across the phosphor layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::40cc54c8bdf5b8546e0f0178c58a2649 https://doi.org/10.1063/1.1391219 Zobrazit plný text záznamu