Autor: |
Hai-Long You, Fei-Chen Liu, Hao-Feng Jiang, Yiqi Zhuang, Cong Li, Jia-Min Guo |
Rok vydání: |
2020 |
Předmět: |
|
Zdroj: |
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). |
DOI: |
10.1109/icsict49897.2020.9278315 |
Popis: |
In this paper, for the first time, a vertically stacked silicon nanosheet-FET (VS-NS-FET) based biosensor is proposed and studied by 3D TCAD simulations. Furthermore, a comparative sensitivity analysis with conventional nanowire (NW-FET) biosensor and vertically stacked nanowire (VS-NW-FET) biosensor is performed to evaluate the performance of the device. The results indicate that the variation of the VS-NS-FET biosensor in transfer characteristics for different target biomolecules (with different dielectric constants (at p = 0) and charge densities (at k = 5)) is pronounced. Moreover, the proposed VS-NS-FET biosensor is more sensitive than the other two biosensors due to the increase of the channel width and the stacked structure. This biosensor is a promising candidate for future CMOS-based sensor applications. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|