Practical quantitative scanning microwave impedance microscopy
Autor: | Fred Stanke, Oskar Amster, Yongliang Yang, St. J. Dixon-Warren, Benedict Drevniok, Stuart Friedman |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Calibration curve business.industry Doping Analytical chemistry 02 engineering and technology Scanning capacitance microscopy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Scanning probe microscopy 0103 physical sciences Microscopy Scanning ion-conductance microscopy Calibration Optoelectronics Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality business Microwave |
Zdroj: | Microelectronics Reliability. :214-217 |
ISSN: | 0026-2714 |
Popis: | Scanning microwave impedance microscopy (sMIM) is an emerging technique that has the potential to displace conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the profiling of dopants in semiconductor samples with sub-micron spatial resolution. In this work, we consider the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. We calibrate the sMIM using a doped calibration sample prior to performing the measurements on an “unknown” production device. We utilize nanoscale C-V curves to establish a calibration curve for both n- and p-type carriers in a single reference and apply the calibration curve to an “unknown” device presenting the measurements in units of doping concentration. The calibrated results are compared to SRP measurements on the same area of the device. |
Databáze: | OpenAIRE |
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