Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon
| Autor: | S. P. Kobeleva, Lev A. Seidman, K. D. Vanyukhin, Yu. A. Kontsevoi, V. A. Kurmachev |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Gallium nitride Condensed Matter Physics Electronic Optical and Magnetic Materials Metal chemistry.chemical_compound chemistry Electrical resistance and conductance Electrical resistivity and conductivity visual_art Materials Chemistry visual_art.visual_art_medium Electrical and Electronic Engineering Composite material Sheet resistance |
| Zdroj: | Russian Microelectronics. 42:483-487 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739713080143 |
| Popis: | Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical resistance of the metal films were estimated by measuring their thickness and surface electrical resistance via the four-probe method. The specific electrical resistance of such films was shown to be considerably higher than for bulk materials. The observed increase in the surface resistance at the edges of the film was due to both the decrease in the thickness of the film and the increase in the specific electrical resistance of the material of the film. The proved regimes were used to obtain metal layers on gallium nitride substrates. |
| Databáze: | OpenAIRE |
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