Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

Autor:	Fareen Adeni Khaja, Marc Schaekers, H. van Meer, Hao Yu, Naoto Horiguchi, Lee Jae Young, Y.-L. Jiang, L.-L. Wang, Dan Mocuta, Kelly E Hollar, L. Date, J.-L. Everaert, Wolfgang R. Aderhold, J. del Agua Borniquel, Abhilash J. Mayur, K. De Meyer, Andriy Hikavyy
Rok vydání:	2017
Předmět:	010302 applied physics Materials science business.industry Annealing (metallurgy) Doping 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Silicon-germanium PMOS logic chemistry.chemical_compound chemistry Transmission electron microscopy Electrical resistivity and conductivity 0103 physical sciences Electronic engineering Optoelectronics Nanosecond laser 0210 nano-technology business
Zdroj:	2017 Symposium on VLSI Technology.
Popis:	We report record breaking values for PMOS source drain (S/D) contact resistivity, ρ c 0.4 Ge 0.6 in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechanism is based on Ga and Ge segregation towards the surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::40bd1fc0d4ef187eefb870a26479b885 https://doi.org/10.23919/vlsit.2017.7998176 Zobrazit plný text záznamu