Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

Autor:	M. Kuliffayova, G.J. Papaioannou, J. Novac, C.D. Kourkoutas, P. Kordos, V. Ioannou-Sougleridis
Rok vydání:	1991
Předmět:	Electron mobility Phonon scattering Condensed matter physics Chemistry Praseodymium Scattering Doping chemistry.chemical_element General Chemistry Condensed Matter Physics Space charge X-ray Raman scattering Hall effect Materials Chemistry
Zdroj:	Solid State Communications. 78:543-546
ISSN:	0038-1098
Popis:	The scattering mechanisms of holes in In 0.53 Ga 0.47 As layers doped with Pr are investigated by analyzing the conductivity and Hall mobility data. The contribution of each individual scattering mechanism is calculated and values for the characteristic scattering parameters are obtained. Scattering by space charge reduces the Hall mobility up to 50% at room temperature being therefore the main scattering mechanism.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::40bccde9b1c71c3d05f74f2244107b06 https://doi.org/10.1016/0038-1098(91)90373-4 Zobrazit plný text záznamu