| Autor: | E. I. Cherepov, E. G. Tishkovskii, Yu. N. Palyanov, Alexander G. Sokol, V. I. Obodnikov |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Mass spectrometry Nitrogen Electronic Optical and Magnetic Materials chemistry Nitrogen atom Macroscopic scale Isothermal annealing Materials Chemistry Electrical and Electronic Engineering |
| Zdroj: | Russian Microelectronics. 31:277-281 |
| ISSN: | 1063-7397 |
| DOI: | 10.1023/a:1020230823633 |
| Popis: | The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds is studied by secondary-ion mass spectrometry. The annealing is performed under vacuum at 1400°C for 1, 5, or 20 h. It is found that the depth profile broadens on a macroscopic scale with annealing time. The broadening is successfully represented by a mathematical model of diffusion. The diffusion coefficient is roughly estimated at 2.3 × 10–15, 8.5 × 10–16, and 3.7 × 10–16 cm2/s for annealing times of 1, 5, and 20 h, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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