Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence
| Autor: | Masayuki Abe, Satoshi Abo, Fujio Wakaya, Hayato Yamashita, Yuji Miyato, Shinobu Onoda, Kenichi Tani |
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| Rok vydání: | 2018 |
| Předmět: |
High energy
Materials science Silicon 0211 other engineering and technologies chemistry.chemical_element Charge density 020101 civil engineering Charge (physics) 02 engineering and technology Radius 0201 civil engineering Ion chemistry 021105 building & construction Atomic physics Order of magnitude Incidence (geometry) |
| Zdroj: | 2018 22nd International Conference on Ion Implantation Technology (IIT). |
| Popis: | The lateral distribution of the charge generated in silicon by a 15 MeV oxygen-ion incidence was experimentally measured. The lateral radius of the charge region generated because of this 15 MeV oxygen-ion incidence was 300–400 nm, which is much wider than that calculated using the well-known Katz theory. In addition, the measured peak concentration of the generated charge around the ion incident point was two orders of magnitude lower than that calculated using the Katz theory. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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