Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

Autor:	D. A. Choutov, Kevin P. Martin, H. P. Gillis, M.B. Christopher
Rok vydání:	1999
Předmět:	Low energy Semiconductor Materials science business.industry Etching (microfabrication) Stoichiometric composition Wide-bandgap semiconductor Optoelectronics General Materials Science Dry etching Electron business
Zdroj:	MRS Internet Journal of Nitride Semiconductor Research. 4:834-839
ISSN:	1092-5783
DOI:	10.1557/s1092578300003495
Popis:	Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the III-N materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::40a036c3e1cd5d6d4cd3a8c4270f8c18 https://doi.org/10.1557/s1092578300003495 Zobrazit plný text záznamu Full text from SpringerLink