Silicon-on-insulator non-volatile field-effect transistor memory
| Autor: | Daniel M. Fleetwood, T.L. Meisenheimer, Marty R. Shaneyfelt, J.R. Schwank, K. Vanhesden, Bruce L. Draper |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Silicon
business.industry Transistor Oxide chemistry.chemical_element Silicon on insulator Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Non-volatile memory chemistry.chemical_compound chemistry law Gate oxide Proton transport Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 59:253-258 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00636-0 |
| Popis: | Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were transported to either the top or bottom Si–buried oxide interface, switching the leakage current of top gate transistors from an ON to an OFF state. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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