Employing a detailed compositional analysis to develop a low defect Mo/Si deposition tool and process for EUVL mask blanks
| Autor: | Dave Krick, Eberhard Spiller, Patrick A. Kearney, Soon-Cheon Seo, Paul Mirkarimi, Rajul Randive, Andy Ma, San-In Han, Toshiyuki Uno |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Manufacturing process Extreme ultraviolet lithography Process (computing) Condensed Matter Physics Blank Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Multiple layer Optics law Optoelectronics Electrical and Electronic Engineering Photolithography business Lithography Deposition (law) |
| Zdroj: | Microelectronic Engineering. 83:695-698 |
| ISSN: | 0167-9317 |
| Popis: | Extreme ultraviolet lithography (EUVL) is the leading lithography technology to fabricate critical feature sizes of 32nm and smaller. For EUVL a Mo/Si multilayer-based reflective optical system is used and the development of suitable, defect-free mask blanks is the greatest challenge facing the commercialization of EUVL. In this paper we describe how a recently formed, state-of-the-art compositional analysis capability at the Mask Development Center at SEMATECH-North was utilized to identify the composition of defects in our process. This compositional information, coupled with tool and procedural upgrades based on best engineering practices and judgement, led to a decrease in the typical multilayer-coating-added defect density on 6in. square quartz substrates by more than an order-of-magnitude, from ~0.5defects/cm^2 to ~0.028defects/cm^2 for particles >=80nm in size (PSL equivalent). We have also obtained a ''champion'' mask blank with an added defect density of only ~0.020defects/cm^2 for particles >=70nm in size. |
| Databáze: | OpenAIRE |
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