Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties
| Autor: | P. Veit, Hans L. Hartnagel, A. Klein, P. Ressel, Geoffrey K. Reeves, E. Kuphal, Patrick W. Leech, E. Nebauer |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 84:861-869 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.368148 |
| Popis: | The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm−3) In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional Pd/Zn/Pd/Au scheme to a minimum and coupling this system to an outer Au layer via an amorphous LaB6 diffusion barrier, contact resistivities ⩽1×10−6 Ω cm2 were achieved only slightly exceeding that of the conventional scheme (2–4×10−7 Ω cm2). The contact reaction depth, however, could be reduced from several hundred to well below 100 nm, since the LaB6 barrier effectively prevents the outer Au layer from reaction with the semiconductor during contact formation. The influence of Zn content on electrical and metallurgical properties has been studied by varying it over orders of magnitude using both implantation and evaporation as a means of introducing Zn into the metallization. Implanted contacts with low Zn content annealed at 375 °C exhibit a reaction depth as low as 55 nm with the Zn diffusion depth practically coinciding with the ... |
| Databáze: | OpenAIRE |
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