Clusters Formation by Rapid Thermal Annealing on SiO2/Ge and SiH/Ge Heterostructures
| Autor: | L. B. Zoccal, Ioshiaki Doi, A. M. Dos Anjos, U. A. Mengui, M. A. Canesqui, José Alexandre Diniz |
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| Rok vydání: | 2007 |
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| Zdroj: | ECS Transactions. 9:269-277 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | A series of amorphous-SiO2/Ge and amorphous-Si:H/Ge heterostructures with four different layer sequences were grown on p-type Si (001) substrates. Rapid Thermal Annealing (RTA) at 1000{degree sign}C during 40s was used to modify the film structure. The RTA effects were extracted from measures in a high-resolution x - ray diffractometer (HRXRD), micro-Raman (MR) and atomic force microscopy (AFM). Crystalline clusters with concentrations varying from 0.03 to 0.57 of Ge contents from different samples were obtained. Grain sizes from 3 to 6 nm were estimated. Amorphous-Si:H/Ge formed crystalline strained clusters, while amorphous-SiO2/Ge formed crystalline relaxed clusters. |
| Databáze: | OpenAIRE |
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