| Autor: |
Satoshi Aida, Hironori Yoshioka, Ichiro Omura, Masaru Izumisawa, T. Ogura, Wataru Saito, Shigeo Koduki |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.. |
| DOI: |
10.1109/ispsd.2005.1487942 |
| Popis: |
Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have semi-superjunction (SemiSJ) structure, which is the combination of superjunction (SJ) structure and n-bottom assisted layer (BAL). The SemiSJ MOSFETs realize both the high breakdown voltage of 1100 and 1400 V and the low on-resistance of 54 and 163 m/spl Omega/cm/sup 2/, respectively. The fabrication process for the high voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. These results show the possibility of new Si power-MOSFET with higher application voltage range. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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