GaN nano‐pendeo‐epitaxy on Si(111) substrates

Autor:	Duncan W. E. Allsopp, Wang Nang Wang, Alan Gott, Philip A. Shields, Somyod Denchitcharoen, Chaowang Liu
Rok vydání:	2009
Předmět:	chemistry.chemical_compound Fabrication Materials science Silicon chemistry Silicon nitride Nano chemistry.chemical_element Wafer Nanotechnology Metalorganic vapour phase epitaxy Condensed Matter Physics Epitaxy
Zdroj:	physica status solidi c. 6
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200880801
Popis:	Nano-pendeo-epitaxial GaN films have been grown by metalorganic vapour phase epitaxy on nanocolumns fabricated on thin GaN-on-Si(111) templates. Optical and structural performances of the films are improved, crack densities are reduced, and self-separation of GaN films from the substrates at the nanocolumns has been realized. The success of the nano-pendeo-epitaxy of GaN films is attributed to the following three techniques developed in this study: (1) the growth of high quality ultrathin GaN/AlN templates on on Si(111) substrates, (2) the fabrication of uniform nanocolumns across the 2-inch wafer surface, and (3) the in situ conversion of the exposed silicon surfaces of the fabricated nanocolumns to silicon nitride. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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