Early Stages of Pore Formation on Si During Etching in HF Solutions

Autor:	Horst Niehus, E. Zur Muhlen
Rok vydání:	1995
Předmět:	Fabrication Silicon Hydrogen Chemistry Open-circuit voltage chemistry.chemical_element Mineralogy Condensed Matter Physics Porous silicon Electronic Optical and Magnetic Materials law.invention Chemical engineering Etching (microfabrication) law Light emission Scanning tunneling microscope
Zdroj:	physica status solidi (b). 190:21-25
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2221900104
Popis:	The fabrication of porous silicon (PS) with controlled pore size distributions is of importance for reproducible manufacturing as well as it may help to elucidate the origin of light emission from this material. The pore formation on p-doped Si(111) surfaces is studied. For this purpose hydrogen passivated surfaces are prepared by wet chemical treatment. After introduction into UHV system a 1 x 1 LEED pattern is readily obtained without any further treatment. These surfaces are etched at the open circuit potential (OCP) in HF solutions with pH-values ranging from 1 to 10. Atomic force microscopy is used to characterize the dependence of pore formation on time and acidity. It is found that narrow pore size distributions can be obtained when HF solutions with high pH-values are used.
Databáze:	OpenAIRE
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