| Autor: |
Tetsuya Nishimura, Kotaro Mitsui, Toshio Murotani, Motoharu Miyashita, Kaoru Kadoiwa, Hisao Kumabe, Norio Hayafuji |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 107:468-472 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(91)90504-x |
| Popis: |
Non-uniform thermal stress distributions due to surface defects can be the origin of crack formation for GaAs layers deposited on Si substrate. A two-reactor MOCVD system specifically designed for GaAs-on-Si has been successfully applied to reduce surface defects of GaAs layers on Si. Three different low temperature buffer layers (LTB) of GaAs, A1As and A1As/GaAs were examined in order to study further improvement effect on the surface morphology. An A1As/GaAs LTB was found to be the most effective for reducing the surface defects. The surface defect number in a GaAs layer on a 3 inch Si wafer is reduced from 1433 (GaAs LTB) to 488 by introducing the A1As/GaAs as a LTB. This resulted in crack-free material for GaAs thickness exceeding 5μm. The use of thermal cycle annealing and the InGaAs/GaAs strained layer superlattices (SLS) is also investigated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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