Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC ${I}$ – ${V}$ Characterization
| Autor: | Yang-Kyu Choi, Kyu-Man Hwang, Do Hyun Kim, Sung Kwan Lim, Seong-Yeon Kim, Choong-Ki Kim, Seung-Wook Lee, Geon-Beom Lee, Hagyoul Bae, Myungsoo Seo, Byoung Hun Lee |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Passivation Silicon Annealing (metallurgy) Transconductance Analytical chemistry Spectral density chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Deuterium chemistry Thin-film transistor 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | IEEE Transactions on Electron Devices. 65:1640-1644 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Deuterium (D2) annealing was applied to a poly-crystalline silicon thin-film transistor (poly-Si TFT) to improve reliability and performance. The field-effect electron mobility ( $\mu $ ) was extracted using the gate transconductance ( ${g}_{m}$ ) method. It was found that $\mu $ was improved before and after D2 annealing. The interface trap density ( ${D}_{\text {it}}$ ) as well as the oxide trap density ( ${N}_{\text {ot}}$ ) in the poly-Si TFTs was quantitatively extracted using both conventional dc I–V characterization and analysis of low frequency noise ( LFN ). The profile of ${N}_{\text {ot}}$ along the depth direction was investigated before and after D2 annealing using LFN characteristics. It was confirmed that ${D}_{\text {it}}$ as well as ${N}_{\text {ot}}$ was reduced by the D2 annealing, resulting in a reduction in power spectral density and variation. |
| Databáze: | OpenAIRE |
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