Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures
| Autor: | M.I. Vexler, V. Zaporojtchenko, A. El Hdiy, K. Gacem, Stanislav Tyaginov |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Condensed matter physics Silicon Mechanical Engineering Oxide chemistry.chemical_element Insulator (electricity) Condensed Matter Physics Soft breakdown chemistry.chemical_compound chemistry Mechanics of Materials Aluminium General Materials Science Electrical measurements Covariant transformation Diode |
| Zdroj: | Materials Science in Semiconductor Processing. 13:405-410 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2011.07.003 |
| Popis: | The possibilities of experimental extraction of the correlation length of insulator thickness fluctuations from the data of electrical measurements on thin metal-insulator-semiconductor (MIS) structures are discussed. The procedure of statistical treatment of currents flowing in a random selection of MIS tunnel diodes is developed enabling the estimation of such a length. Another proposed technique is based on the quantitative analysis of soft-breakdown-related current jumps down occurring under high-voltage stress. The novel methods were tested using Al/SiO 2 /Si structures and shown to yield the value of correlation length close to that given by a straightforward “covariant” method applied to the thickness profiles of the same oxide films. |
| Databáze: | OpenAIRE |
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