SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

Autor:	M.R. Taylor, E.A. Maydell-Ondrusz, John A. Kilner, R.P. Arrowsmith, P.L.F. Hemment, R.F. Peart, Richard J. Chater
Rok vydání:	1985
Předmět:	Nuclear and High Energy Physics Chemistry TRACER Analytical chemistry chemistry.chemical_element Redistribution (chemistry) Instrumentation Oxygen Ion
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :293-298
ISSN:	0168-583X
DOI:	10.1016/0168-583x(85)90568-3
Popis:	The formation of buried SiO 2 layers by high dose oxygen implantation has been monitored by the implantation of 18O tracer atoms and subsequent analysis by negative ion SIMS. Exchange of 18O with matrix oxygen in the buried layer occurred for all experiments. Rapid redistribution of the implanted tracer trace to the edges of the SiO 2 layer was observed. The lower SiSiO 2 interface appears to be a barrier to further redistribution of the tracer oxygen.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4031a7d48faad77d37bbaea39bd9d556 https://doi.org/10.1016/0168-583x(85)90568-3 Zobrazit plný text záznamu