Effect of the plasma experimental parameters on the dose and profiles of hydrogen in-diffused into the GaN/AlGaN/GaN/Si high electron mobility transistor

Autor:	J. Mimila-Arroyo, A.S. Arreola-Pina, F. Jomard, A. Lusson
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	Materials Science and Engineering: B. 290:116279
ISSN:	0921-5107
DOI:	10.1016/j.mseb.2023.116279
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4026de1cb65b8ae5321a412cfe938642 https://doi.org/10.1016/j.mseb.2023.116279 Zobrazit plný text záznamu Full Text from ScienceDirect