A C-V examination of the electrically reversible depassivation/passivation mechanism in polycrystalline silicon

Autor:	S.J. Fonash, V. Suntharalingam
Rok vydání:	2002
Předmět:	Materials science Hydrogen Silicon Passivation business.industry chemistry.chemical_element engineering.material Capacitance law.invention Stress (mechanics) Polycrystalline silicon chemistry law Thin-film transistor Electronic engineering engineering Optoelectronics Crystallization business
Zdroj:	1996 54th Annual Device Research Conference Digest.
DOI:	10.1109/drc.1996.546320
Popis:	Recently, we reported the first observations of an electrically reversible depassivation/passivation phenomenon in hydrogen passivated polycrystalline silicon and presented a model for it based on hydrogen release and drift. Here we show our latest finding obtained in studying the depassivation/passivation phenomenon for an RF-hydrogenated polycrystalline silicon n-channel TFT using high frequency capacitance-voltage characterization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::401c370788a063f898489aebfbe9f441 https://doi.org/10.1109/drc.1996.546320 Zobrazit plný text záznamu