Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
| Autor: | Alexey V. Afanasyev, Renato Minamisawa, Giovanni Alfieri, Lars Knoll, H. Bartolf, Victor V. Luchinin, Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Conductance Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Capacitance Mechanics of Materials Gate oxide Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics General Materials Science business Metal gate Hardware_LOGICDESIGN |
| Zdroj: | Materials Science Forum. :480-483 |
| ISSN: | 1662-9752 |
| Popis: | Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure. |
| Databáze: | OpenAIRE |
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