Preparation and oxidation of composite TiN–AlN films from alkoxide solutions by plasma-enhanced CVD
| Autor: | Jiro Tsujino, Shiro Shimada, Yoshikazu Takada |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Scanning electron microscope Composite number Mineralogy chemistry.chemical_element Chemical vapor deposition Substrate (electronics) chemistry.chemical_compound Carbon film X-ray photoelectron spectroscopy chemistry Chemical engineering Alkoxide Materials Chemistry Ceramics and Composites Tin |
| Zdroj: | Journal of the European Ceramic Society. 25:1765-1770 |
| ISSN: | 0955-2219 |
| DOI: | 10.1016/j.jeurceramsoc.2004.12.006 |
| Popis: | Composite and compositionally graded (CGed) TiN–AlN films were deposited on Si wafers at 600 °C from Ti- and Al-alkoxide solutions by N 2 plasma-enhanced chemical vapor deposition (CVD). The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Vickers micro-hardness. In the composite TiN–AlN films, the Ti and Al contents varied linearly and complementarily with solution composition, the N content ranging from 35 to 40 at.%. In the CGed films, the Al component decreased complementarily with increasing Ti toward the substrate. Cross-sectional SEM observation showed both films to be about 1 μm thick with a columnar structure. Oxidation of the composite and CGed films was performed at 500, 700, and 900 °C in air for 1 h. The improvement of oxidation resistance in both composite and CGed films is discussed on the basis of the XRD and SEM observations, and the XPS analysis of the oxidized films. |
| Databáze: | OpenAIRE |
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