| Autor: |
Jevgenijs Kaupužs, A. Medvid |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 1117:114-117 |
| ISSN: |
1662-8985 |
| Popis: |
The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerically based on the drift-diffusion equation and Poisson equation. The calculated efficiency of the CdTe solar cell with p-n junction located in 1μm depth increases remarkably when the band gap of the front n-type layer is graded. The effect is strong for high surface recombination velocity and is remarkable even at: the calculated efficiency increases from 19.6% to 24.3%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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