On the static conductivity of a heavily doped semiconductor

Autor:	V. M. Evdokimov, Yu. D. Arbuzov
Rok vydání:	1979
Předmět:	Semiconductor Materials science Condensed matter physics business.industry Scattering Impurity Doping Conductivity Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics business Electronic Optical and Magnetic Materials Term (time)
Zdroj:	Physica Status Solidi (b). 92:579-583
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2220920230
Popis:	It is shown that the static conductivity of a heavily doped semiconductor may be obtained in terms of a transport relaxation time. Not only the term of Born's approximation is regained in the framework of the assumptions made but as well the terms associated with the scattering by two impurities are taken into account. The relevant correction to the static conductivity is calculated. [Russian Text Ignored].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4009e1e4baa60f5a6934f69d0086f558 https://doi.org/10.1002/pssb.2220920230 Zobrazit plný text záznamu Plný text