| Autor: |
Vadim Yu. Panevin, I. E. Titkov, Anatoly V. Shturbin, Renata F. Witman |
| Rok vydání: |
2001 |
| Předmět: |
|
| Zdroj: |
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.417637 |
| Popis: |
In this paper we present a simple non-destructive method for testing SiC plate single-crystals of any size and shape. Themethod is based on measuring the impedance changes of an inductive ferrite-cored coil due to placing the sample into thecore gap. The method is valid for any SiC polytypes, though we used 6H one. Using this method we have obtained anddiscussed a conductivity as a function of doping level (NdNa) for 6H-SiC Lely crystals. The conductivity measurements were carried out with alternating current of 747 kHz frequency. The sensitivity of the method is limited by minimal conductivity 1 (Ohnrcm)1 (that is corresponding to (NdNa) 21016cnf3 for 6H-SiC:N Lely crystals).Keywords: high frequency; non-destructive, special conductivity, silicon carbide. 1. INTRODUCTION The problem we consider is the non-destructive measurement of the conductivity of small irregular SiC crystals, which are commonly used in scientific laboratories. Note that the contact measurement of the conductivity of wide band gapsemiconductors is possible only with specially treated contacts. There is a good way to solve the problem |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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