Surface nitridation of silicon nano‐particles using double multi‐hollow discharge plasma CVD
Autor: | Muneharu Sato, Kenta Nakahara, Masaharu Shiratani, Michio Kondo, Yuki Kawashima, Kazunori Koga, Kosuke Yamamoto, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki |
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Rok vydání: | 2011 |
Předmět: | |
Zdroj: | physica status solidi c. 8:3017-3020 |
ISSN: | 1610-1642 1862-6351 |
DOI: | 10.1002/pssc.201001230 |
Popis: | We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH4/H2 and N2 multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: | OpenAIRE |
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